Publications

Rothstein A, Dolleman RJ, Klebl L, Achtermann A, Volmer F, Watanabe K et al. Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene. 2025 Oct 17. doi: 10.48550/arXiv.2510.15503

Bondar JD, Banszerus L, Marshall W, Lindemann T, Zhang T, Manfra MJ et al. From two dimensions to wire networks in a dice-lattice Josephson array. arXiv. 2025 Oct 8.

Banszerus L, Hecker K, Wang L, Möller S, Watanabe K, Taniguchi T et al. Phonon-limited valley lifetimes in single-particle bilayer graphene quantum dots. Physical Review B. 2025 Jul 10;112(3):035409. doi: 10.1103/dkgn-pfjb

Rothstein A, Fischer A, Achtermann A, Icking E, Hecker K, Banszerus L et al. Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene. Nano Letters. 2025 Apr 23;25(16):6429–6437. Epub 2025 Apr 14. doi: 10.1021/acs.nanolett.4c06492

Möller S, Banszerus L, Hecker K, Dulisch H, Watanabe K, Taniguchi T et al. Role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots. Physical Review B. 2025 Apr 18;111(16):165416. doi: 10.1103/PhysRevB.111.165416

Banszerus L, Andersson CW, Marshall W, Lindemann T, Manfra MJ, Marcus CM et al. Hybrid Josephson rhombus: A superconducting element with tailored current-phase relation. Physical Review X. 2025 Feb 4;15(1):011021. doi: 10.1103/PhysRevX.15.011021

Banszerus L, Marshall W, Andersson CW, Lindemann T, Manfra MJ, Marcus CM et al. Voltage-Controlled Synthesis of Higher Harmonics in Hybrid Josephson Junction Circuits. Physical Review Letters. 2024 Nov 1;133(18):186303. doi: 10.1103/PhysRevLett.133.186303

Hecker K, Banszerus L, Schäpers A, Möller S, Peters A, Icking E et al. Coherent charge oscillations in a bilayer graphene double quantum dot. Nature Communications. 2023 Dec;14(1):7911. doi: 10.1038/s41467-023-43541-3

Möller S, Banszerus L, Knothe A, Valerius L, Hecker K, Icking E et al. Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots. Physical Review B. 2023 Sept 15;108(12):125128. doi: 10.1103/PhysRevB.108.125128

Banszerus L, Möller S, Hecker K, Icking E, Watanabe K, Taniguchi T et al. Particle-hole symmetry protects spin-valley blockade in graphene quantum dots. Nature. 2023 Jun 1;618:51-56. doi: 10.1038/s41586-023-05953-5

Volk C, Banszerus L, Stampfer C. Elektronen auf den Punkt gebracht. Physik in Unserer Zeit. 2023;54(4):194-200. doi: 10.1002/piuz.202301672

Schmidt P, Banszerus L, Frohn B, Blien S, Watanabe K, Taniguchi T et al. Tuning the supercurrent distribution in parallel ballistic graphene Josephson junctions. Physical Review Applied. 2023;20(5):054049. doi: 10.1103/PhysRevApplied.20.054049

Icking E, Banszerus L, Wörtche F, Volmer F, Schmidt P, Steiner C et al. Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene. Advanced Electronic Materials. 2022 Nov 1;8(11):2200510. doi: 10.1002/aelm.202200510

Banszerus L, Hecker K, Möller S, Icking E, Watanabe K, Taniguchi T et al. Spin relaxation in a single-electron graphene quantum dot. Nature Communications. 2022 Jun 25;13(1):3637. doi: 10.1038/s41467-022-31231-5

Banszerus L. Gate-defined quantum dots in bilayer graphene. 2022. doi: 10.18154/RWTH-2022-08912

Banszerus L, Möller S, Steiner C, Icking E, Trellenkamp S, Lentz F et al. Spin-valley coupling in single-electron bilayer graphene quantum dots. Nature Communications. 2021 Dec 1;12(1):5250. doi: 10.1038/s41467-021-25498-3

Möller S, Banszerus L, Knothe A, Steiner C, Icking E, Trellenkamp S et al. Probing Two-Electron Multiplets in Bilayer Graphene Quantum Dots. Physical Review Letters. 2021 Dec;127(25):256802. doi: 10.1103/PhysRevLett.127.256802

Pogna EAA, Jia X, Principi A, Block A, Banszerus L, Zhang J et al. Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons. ACS Nano. 2021 Jul 27;15(7):11285-11295. doi: 10.1021/acsnano.0c10864

Banszerus L, Rothstein A, Icking E, Möller S, Watanabe K, Taniguchi T et al. Tunable interdot coupling in few-electron bilayer graphene double quantum dots. Applied Physics Letters. 2021 Mar 8;118(10):103101. doi: 10.1063/5.0035300

Banszerus L, Möller S, Icking E, Steiner C, Neumaier D, Otto M et al. Dispersive sensing of charge states in a bilayer graphene quantum dot. Applied Physics Letters. 2021 Mar 1;118(9):093104. doi: 10.1063/5.0040234

Wirth KG, Linnenbank H, Steinle T, Banszerus L, Icking E, Stampfer C et al. Tunable s-SNOM for nanoscale infrared optical measurement of electronic properties of bilayer graphene. ACS Photonics. 2021 Feb 17;8(2):418-423. doi: 10.1021/acsphotonics.0c01442

Banszerus L, Hecker K, Icking E, Trellenkamp S, Lentz F, Neumaier D et al. Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots. Physical Review B. 2021 Feb 16;103(8):L081404. doi: 10.1103/PhysRevB.103.L081404

Banszerus L, Fabian T, Möller S, Icking E, Heiming H, Trellenkamp S et al. Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate-Defined Quantum Dots. Physica Status Solidi. B: Basic Research. 2020 Dec 1;257(12):2000333. doi: 10.1002/pssb.202000333

Banszerus L, Rothstein A, Fabian T, Möller S, Icking E, Trellenkamp S et al. Electron-Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots. Nano Letters. 2020 Oct 14;20(10):7709-7715. doi: 10.1021/acs.nanolett.0c03227

Leonhardt A, de la Rosa CJL, Nuytten T, Banszerus L, Sergeant S, Mootheri VK et al. Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS₂. Advanced Materials Interfaces. 2020 Sept 1;7(18):2000413. doi: 10.1002/admi.202000413

Banszerus L, Frohn B, Fabian T, Somanchi S, Epping A, Müller M et al. Observation of the Spin-Orbit Gap in Bilayer Graphene by One-Dimensional Ballistic Transport. Physical Review Letters. 2020 May 1;124(17):177701. doi: 10.1103/PhysRevLett.124.177701

Banszerus L, Möller S, Icking E, Watanabe K, Taniguchi T, Volk C et al. Single-electron double quantum dots in bilayer graphene. Nano Letters. 2020 Mar 11;20(3):2005-2011. doi: 10.1021/acs.nanolett.9b05295

Backes C, Abdelkader AM, Alonso C, Andrieux-Ledier A, Arenal R, Azpeitia J et al. Production and processing of graphene and related materials. 2D Materials. 2020 Jan 29;7(2):022001. doi: 10.1088/2053-1583/ab1e0a

Feijoo PC, Pasadas F, Bonmann M, Asad M, Yang X, Generalov A et al. Does carrier velocity saturation help to enhance f max in graphene field-effect transistors? Nanoscale Advances. 2020;2(9):4179-4186. doi: 10.1039/C9NA00733D

Dauber J, Reijnders KJA, Banszerus L, Epping A, Watanabe K, Taniguchi T et al. Exploiting Aharonov-Bohm oscillations to probe Klein tunneling in tunable pn-junctions in graphene. arXiv. 2020. doi: 10.48550/arXiv.2008.02556

Banszerus L, Libisch F, Ceruti A, Blien S, Watanabe K, Taniguchi T et al. Minigap and Andreev bound states in ballistic graphene. arXiv. 2020. doi: 10.48550/arXiv.2011.11471

Asad M, Bonmann M, Yang X, Vorobiev A, Jeppson K, Banszerus L et al. The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties. IEEE Journal of the Electron Devices Society. 2020;8:457-464. 9070193. doi: 10.1109/JEDS.2020.2988630

Graef H, Wilmart Q, Rosticher M, Mele D, Banszerus L, Stampfer C et al. A corner reflector of graphene Dirac fermions as a phonon-scattering sensor. Nature Communications. 2019 Dec 1;10(1):2428. doi: 10.1038/s41467-019-10326-6

Verbiest GJ, Janssen H, Xu D, Ge X, Goldsche M, Sonntag J et al. Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields. Review of Scientific Instruments. 2019 Aug 1;90(8):084706. doi: 10.1063/1.5089207

Bonmann M, Asad M, Yang X, Generalov A, Vorobiev A, Banszerus L et al. Graphene Field-Effect Transistors With High Extrinsic f_T and f_max. IEEE Electron Device Letters. 2019 Jan;40(1):131-134. 8552417. Epub 2018 Nov. doi: 10.1109/LED.2018.2884054

Banszerus L, Sohier T, Epping A, Winkler F, Libisch F, Haupt F et al. Extraordinary high room-temperature carrier mobility in graphene-WSe$_2 $ heterostructures. arXiv. 2019. doi: 10.48550/arXiv.1909.09523

Vorobiev A, Bonmann M, Asad M, Yang X, Stake J, Banszerus L et al. Graphene field-effect transistors for millimeter wave amplifiers. In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). 2019. p. 1-2. 8874149 doi: 10.1109/IRMMW-THz.2019.8874149

Suessmeier C, Abadal S, Banszerus L, Thiel F, Alarcón E, Wigger AK et al. Analysis of a plasmonic graphene antenna for microelectronic applications. In 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). 2018. p. 1-2. 8510243 doi: 10.1109/IRMMW-THz.2018.8510243

Banszerus L, Frohn B, Epping A, Neumaier D, Watanabe K, Taniguchi T et al. Gate-defined electron-hole double dots in bilayer graphene. Nano Letters. 2018 Aug 8;18(8):4785-4790. doi: 10.1021/acs.nanolett.8b01303

Epping A, Banszerus L, Güttinger J, Krückeberg L, Watanabe K, Taniguchi T et al. Quantum transport through MoS₂ constrictions defined by photodoping. Journal of Physics: Condensed Matter. 2018 Apr 20;30(20):205001. doi: 10.1088/1361-648X/aabbb8

Tielrooij KJ, Hesp NCH, Principi A, Lundeberg MB, Pogna EAA, Banszerus L et al. Out-of-plane heat transfer in van der Waals stacks through electron-hyperbolic phonon coupling. Nature Nanotechnology. 2018 Jan 1;13(1):41-46. doi: 10.1038/s41565-017-0008-8

Yang X, Vorobiev A, Jeppson K, Stake J, Banszerus L, Stampfer C et al. Low-frequency Noise Characterization of Graphene FET THz Detectors. In 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). 2018. p. 1-2

Graef H, Mele D, Rosticher M, Banszerus L, Stampfer C, Taniguchi T et al. Ultra-long wavelength Dirac plasmons in graphene capacitors. Journal of Physics: Materials. 2018;1(1):01LT02. doi: 10.1088/2515-7639/aadd8c

Drögeler M, Banszerus L, Volmer F, Taniguchi T, Watanabe K, Beschoten B et al. Dry-transferred CVD graphene for inverted spin valve devices. Applied Physics Letters. 2017 Oct 9;111(15):152402. doi: 10.1063/1.5000545

Banszerus L, Watanabe K, Taniguchi T, Beschoten B, Stampfer C. Dry transfer of CVD graphene using MoS$_2$-based stamps. physica status solidi (RRL)--Rapid Research Letters. 2017 Jul;11(7):1700136. doi: 10.1002/pssr.201700136

Schmitz M, Engels S, Banszerus L, Watanabe K, Taniguchi T, Stampfer C et al. High mobility dry-transferred CVD bilayer graphene. Applied Physics Letters. 2017 Jun 26;110(26):263110. doi: 10.1063/1.4990390

Pogna EAA, Trovatello C, Tielrooij KJ, Hesp NCH, Principi A, Lundeberg M et al. Non-equilibrium optical properties of encapsulated graphene. In 2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference. München: Optica Publishing Group. 2017. EI_2_4

Banszerus L, Janssen H, Otto M, Epping A, Taniguchi T, Watanabe K et al. Identifying suitable substrates for high-quality graphene-based heterostructures. 2D Materials. 2017 Jun;4(2):025030. doi: 10.1088/2053-1583/aa5b0f

Wang Z, Banszerus L, Otto M, Watanabe K, Taniguchi T, Stampfer C et al. Encapsulated graphene-based Hall sensors on foil with increased sensitivity. Physica Status Solidi. B: Basic Research. 2016 Dec 1;253(12):2316-2320. doi: 10.1002/pssb.201600224

Neumann C, Banszerus L, Schmitz M, Reichardt S, Sonntag J, Taniguchi T et al. Line shape of the Raman 2D peak of graphene in van der Waals heterostructures. Physica Status Solidi. B: Basic Research. 2016 Dec 1;253(12):2326-2330. doi: 10.1002/pssb.201600283

Drögeler M, Franzen C, Volmer F, Pohlmann T, Banszerus L, Wolter M et al. Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices. Nano Letters. 2016 Jun 8;16(6):3533-3539. doi: 10.1021/acs.nanolett.6b00497

Banszerus L, Schmitz M, Engels S, Goldsche M, Watanabe K, Taniguchi T et al. Ballistic Transport Exceeding 28 μm in CVD Grown Graphene. Nano Letters. 2016 Feb 10;16(2):1387-1391. doi: 10.1021/acs.nanolett.5b04840

Neumann C, Halpaap D, Reichardt S, Banszerus L, Schmitz M, Watanabe K et al. Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy. Applied Physics Letters. 2015 Dec 7;107(23):233105. doi: 10.1063/1.4936995

Neumann C, Reichardt S, Venezuela P, Drögeler M, Banszerus L, Schmitz M et al. Raman spectroscopy as probe of nanometre-scale strain variations in graphene. Nature Communications. 2015 Sept 29;6(1):8429. doi: 10.1038/ncomms9429

Banszerus L, Schmitz HM, Beschoten B, Stampfer C. Graphen auf dem Weg zur Anwendung. Physik in Unserer Zeit. 2015;46(6):269-270. doi: 10.1002/piuz.201590101

Banszerus L, Schmitz M, Engels S, Dauber J, Oellers M, Haupt F et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Science Advances. 2015;1(6):1500222. doi: 10.1126/sciadv.1500222